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oxygen vacancy in Chinese

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How to pronounce "oxygen vacancy""oxygen vacancy" in a sentence

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  • 氧缺位

Examples

  • On the other hand , oxygen plasma treatment makes ito film oxidized further , which decreases the number of oxygen vacancy and sn ~ ( 4 + )
    另一方面,氧等離子體處理使ito薄膜表面的富sn氧化物進(jìn)一步氧化,形成穩(wěn)定的sno ,減少了ito薄膜表面的氧空位和sn ~ ( 4 + )數(shù)量,使其功函數(shù)增大。
  • Compared with pl of pure nanotube , the emission peak energy shift value was larger . this may result from the formation of oxygen vacancies in the nanotube during the process of surface - modification
    ( 2 )使用十六醇對(duì)納米管鈦酸進(jìn)行了化學(xué)修飾，結(jié)果表明納米管表面與十六醇發(fā)生酯化反應(yīng)。
  • The subst - itutional oxygen vacancies and tin contributing to its high conductivity . the high optical transmittance of ito films is a direct consequence of it being a wide band gap ( eg > 3ev )
    Ito結(jié)構(gòu)中的氧空位和錫摻雜使得它具有很強(qiáng)的導(dǎo)電性，較大的能帶間隙寬度( e _ g 3ev )使得它具有很強(qiáng)的光透明性。
  • The uv - visible absorption spectrum showed the as - prepared aam templates were transparent within visible light , and the pl curve showed the as - prepared aam templates had a blue pl band in wavelength range of 400nm ~ 60qnm which originated from singly ionized oxygen vacancies
    從光致發(fā)光特性曲線發(fā)現(xiàn)，納米孔陣列aam在400一600nm之間有一個(gè)藍(lán)色發(fā)光帶，該發(fā)光帶來源于單離子氧空位。
  • In the discussion of visible luminescence mechanism , in order to prove that the oxygen vacancies or defects distribute on the surface of nanocrystallites , we presented to prepare the zno thin films with doped mn and studied the photoluminescence of zno : mn
    在可見發(fā)光機(jī)制探討中，為了證明氧空位或缺陷是分布在納米晶表面，我們提出氧化鋅中摻雜錳（ zno ： mn ） ，研究了zno ： mn薄膜的光致發(fā)光（ pl ） 。
  • It was found from the experiment that , with the increasing of substrate temperature , there were more oxygen vacancies in the films , which lead the conductance of the sample become larger , and the absorb edge of zno thin films shifted toward higher wavelength ; with increasing of ar : o2 ratio , there were lesser oxygen vacancies in the films , which lead the absorb edge of zno thin films shifted toward lower wavelength
    實(shí)驗(yàn)還發(fā)現(xiàn)，隨著襯底溫度的升高，薄膜中產(chǎn)生的氧空位將會(huì)增多，使得zno薄膜的電導(dǎo)逐漸增大，而且其紫外透射吸收截止邊帶向高波長(zhǎng)方向漂移；隨著氬氧比例的增加，薄膜中的氧缺陷相對(duì)減少，薄膜的透射吸收截止邊向低波長(zhǎng)方向漂移。
  • It was found from the experiment that , with the increasing of substrate temperature , there were more oxygen vacancies in the films , which lead the conductance of the sample become larger , and the absorb edge of ito thin films shifted toward lower wavelength ; with increasing of ar : o2 ratio , there were lesser oxygen vacancies in the films , which lead the absorb edge of ito thin films shifted toward lower wavelength
    實(shí)驗(yàn)還發(fā)現(xiàn)，在一定的溫度范圍內(nèi)隨著襯底溫度的升高，薄膜中產(chǎn)生的氧空位將會(huì)增多，使得ito薄膜的電導(dǎo)逐漸增大，而且其紫外透射吸收截止邊帶向短波長(zhǎng)方向漂移；隨著氬氧比例的增加，薄膜中的氧缺陷相對(duì)減少，薄膜的透射吸收截止邊向低波長(zhǎng)方向漂移。
  • The magnitude of the conductivity maximum increases and shifts to lower temperature with increasing sr content . in this paper , the electrical conductivity reaches maximum value at x = 0 . 4 . below the temperature corresponding to the maximum value , the electrical conductivity is found to follow the relationship for the small polaron hopping mechanism , charge compensation of oxygen vacancy dominates electrical conduction at high temperature , and oxygen vacancy acts as traps to catch carriers , resulting in the decrease of carriers concentration and mobility
    通過電學(xué)和熱學(xué)性能測(cè)試結(jié)果表明，電導(dǎo)率隨著sr含量的增加以及溫度的變化都出現(xiàn)了極大值，在本論文中，在sr含量為0 . 4時(shí)電導(dǎo)率值最大，電導(dǎo)率最大值對(duì)應(yīng)的溫度隨著sr含量的增加而降低，這是由于在低溫下以小極化子導(dǎo)電機(jī)理為主，在高溫階段則是氧空位的電荷補(bǔ)償占據(jù)主導(dǎo)作用，氧空位使得載流子的濃度和可動(dòng)性減弱，從而導(dǎo)致電導(dǎo)率降低。
  • With the increase of the amount of al , the intensity of the pl peak at 510nm increases . with the aid of ple we can suggest that pl peak at 370nm and 410nm are related to the oxygen vacancies , and 510nm peak originate from a complex co - function of al , si , and o . el devices have been fabricated on three types of silicon based oxide films ( ge - sio2 films , si - sio2 films , and al - sio2 films )
    用不同的方法制備的51一5102薄膜、 ge一510 :薄膜和al一51一5102薄膜，在較低的電壓萬(wàn)均觀察到了室溫可見電致發(fā)光現(xiàn)象，峰位都在510nm左右，其峰位不因薄膜樣品內(nèi)所含顆粒的種類、薄膜的制備方法、偏壓及后處理的影響，表明電致發(fā)光主要來源于電子和空穴在510 、基質(zhì)中的發(fā)光中心的輻射復(fù)合發(fā)光。
  • By examining the vacancy formation energy of three kinds of defect sno _ 2 ( 110 ) surface , the most energetically favorable defect surface is that the surface possesses the coexistence of bridging and in - plane oxygen vacancies , which is different with the traditional defect model by only removing bridging oxygen
    通過考察形成三種不同類型sno _ 2 ( 110 )缺陷表面的缺陷形成能,結(jié)果表明,形成同時(shí)具有橋氧和面氧缺陷的構(gòu)型能量上最為有利,這與通常所認(rèn)為的橋氧缺陷最為穩(wěn)定不同。
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